| PART |
Description |
Maker |
| NTE103ANPN |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE
|
| 2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| AA143 |
Gold Bonded Germanium Diodes 0.04 A, GERMANIUM, SIGNAL DIODE, DO-7
Gold Bonded Germanium Diodes
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N34A |
GERMANIUM DIODE 0.05 A, 75 V, GERMANIUM, SIGNAL DIODE, DO-7
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 2N3773 2N6609 ON0042 |
From old datasheet system
COMPLEMENTARY POWER TRANSISTORS
Complementary Slllcon Powar Translstors
|
ONSEMI[ON Semiconductor]
|
| 2N6052 2N6058 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
12 AMPERE COMPLEMENTARY
|
ON Semiconductor
|
| MJE15032 MJE15033 ON2013 |
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
From old datasheet system
|
Motorola, Inc
ONSEMI[ON Semiconductor]
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| OA1161 |
GERMANIUM DIODE
|
BK
|
| OA180 |
GERMANIUM DIODE
|
BK
|
| 1N4502 |
GERMANIUM DIODE
|
New Jersey Semi-Conductor Products, Inc.
|
